ANGLE-RESOLVED PHOTOEMISSION FROM AS-STABLE GAAS (001) SURFACES PREPARED BY MBE

被引：74

作者：

LARSEN, PK ^{[1
]}

NEAVE, JH ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 02期

关键词：

D O I：

10.1088/0022-3719/14/2/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：167 / 192

页数：26

共 42 条

[1] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1623 - 1632
[2] DIFFRACTION OF HE AT THE RECONSTRUCTED SI(100) SURFACE
CARDILLO, MJ
BECKER, GE
[J]. PHYSICAL REVIEW B, 1980, 21 (04): : 1497 - 1510
[3] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47
[4] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812
[5] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE RELAXED (110) SURFACE OF GAAS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1979, 20 (10) : 4150 - 4159
[6] ANGLE-RESOLVED PHOTOEMISSION AND VALENCE BAND DISPERSIONS ENERGY OF CRYSTAL MOMENTUM FOR GAAS - DIRECT VS INDIRECT MODELS
CHIANG, TC
KNAPP, JA
EASTMAN, DE
AONO, M
[J]. SOLID STATE COMMUNICATIONS, 1979, 31 (12) : 917 - 920
[7] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS
CHIANG, TC
KNAPP, JA
AONO, M
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3513 - 3522
[8] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[9] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001)
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843
[10] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

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