CHARACTERIZATION OF SUBMONOLAYER GROWTH OF CU ISLANDS ON CU(001)

被引：45

作者：

BARKEMA, GT

BIHAM, O

BREEMAN, M

BOERMA, DO

VIDALI, G

机构：

[1] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244

[2] CORNELL UNIV,ATOM & SOLID STATE PHYS LAB,ITHACA,NY 14853

[3] UNIV GRONINGEN,CTR MAT SCI,9700 AB GRONINGEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1994年 / 306卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(94)90068-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Submonolayer island growth of Cu on Cu(001) is simulated using energy barriers derived by the atom-embedding method of Finnis and Sinclair. We find that the island density during deposition quickly saturates and forms a plateau over a range of the coverage theta. We observe that due to high edge mobility the islands form compact shapes and that the average island size RBAR scales like RBAR approximately theta(n) where n almost-equal-to 0.5, in agreement with recent experiments.

引用

页码：L569 / L574

页数：6

共 30 条

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