STRESS ANISOTROPY IN SILICON OXIDE FILMS

被引：47

作者：

PRIEST, J

CASWELL, HL

BUDO, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 02期

关键词：

D O I：

10.1063/1.1702611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：347 / &

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