OPTICALLY PUMPED CD3P2 LASER

被引：34

作者：

BISHOP, SG

MOORE, WJ

SWIGGARD, EM

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 11期

关键词：

D O I：

10.1063/1.1653066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：459 / &

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[1] BENOIT C, 1966, PHYSICS QUANTUM ELEC, P397
[2] PHOTOLUMINESCENCE AND STIMULATED EMISSION IN CD3P2
BISHOP, SG
MOORE, WJ
SWIGGARD, EM
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (01) : 12 - &
[3] BISHOP SG, 1969, 3 P INT C PHOT STAND
[4] PREPARATION + SEMICONDUCTING PROPERTIES OF CD3P2
HAACKE, G
CASTELLION, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2484 - &
[5] OPTICALLY PUMPED THIN-PLATELET SEMICONDUCTOR LASERS
JOHNSON, MR
HOLONYAK, N
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3977 - +
[6] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E)
PHELAN, RJ
REDIKER, RH
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 70 - &