EMISSIONSPECTROSCOPIC INVESTIGATIONS ON SICL4 AND CCL4/SI PLASMAS FOR ETCHING PROCESSES

The emission spectra of SiCl4- and CCl4/Si radio frequency discharges are analyzed. The broad emission between 310 and 360 nm is attributed to SiCl2 (A approximately 1B1 - X approximately 1A1 transition). The vibrational frequencies in the 1B1 state (v approximately 2') and in the 1A1 state (v approximately 2") and the energy difference between the vibrational ground states of the electronic 1B1 and 1A1 states are estimated. Further emission analysis results in an assignment of the 400 nm system to SiCl3 or SiCl3+ resp. Experimental results of the SiCl (B2-SIGMA- - X3II(r)) and SiCl (B2-DELTA - X3II(r) emission with high resolution are given.