ELECTRONIC-STRUCTURE OF GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICES WITH X-LESS-THAN-0.5

被引：58

作者：

OSBOURN, GC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：469 / 472

页数：4

共 15 条

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