METALORGANIC VAPOR-PHASE EPITAXY OF CUGA(SXSE1-X)2 LATTICE-MATCHED TO GAP (100)

CuGa(S(x)Se1-x)2 epitaxial layers were grown on GaP (100) substrates by metalorganic vapor phase epitaxy. The alloy composition of the grown layers was controlled by the transport rates of H2S and H2Se. A dramatic improvement in the crystalline quality of the CuGa(S(x)Se1-x)2 layer lattice-matched to the substrate was evidenced by the narrow linewidth of the double-crystal X-ray rocking curve and the smooth surface. The lattice-matching conditions can be discussed in terms of crystal orientation, lattice parameter and thermal expansion coefficient.