HIGH-RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL N-GAAS

被引：43

作者：

EBERHARDT, JE

RYAN, RD

TAVENDAL.AJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 10期

关键词：

D O I：

10.1063/1.1653257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：427 / +

共 12 条

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[2]

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[3]

BOLGER DE, 1966 P INT S READ, P16

[4]

DEARNALEY G, 1963, SEMICONDUCTOR COUNTE

[5] GALLIUM ARSENIDE FOR GAMMA-RAY SPECTROSCOPY [J].

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SIMPSON, O .

NATURE, 1960, 187 (4735) :405-405

[6] HIGH PURITY GAAS BY LIQUID PHASE EPITAXY [J].

HICKS, HGB ;

MANLEY, DF .

SOLID STATE COMMUNICATIONS, 1969, 7 (20) :1463-&

[7] GALLIUM ARSENIDE SURFACE BARRIER DIODE AS CHARGED PARTICLE SPECTROMETER [J].

KOBAYASHI, T ;

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[8]

MAYER JW, 1962, NUCLEONICS, V20, P60

[9] ACCURATE DETERMINATION OF IONIZATION ENERGY IN SEMICONDUCTOR DETECTORS [J].

PEHL, RH ;

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[10]

SCHUSTER P, ACTA PHYS AUSTRIACA, V23

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