HOLE TRAPS IN THERMAL SILICON DIOXIDE INTRODUCED BY CHLORINE

被引：6

作者：

MANCHANDA, L

VASI, J

BHATTACHARYYA, AB

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.92018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：744 / 747

页数：4

共 18 条

[1]

ABUCHAN KG, 1974, IEEE T NUCL SCI, V21, P167

[2] CHLORINE CONCENTRATION PROFILES IN O2-HCL AND H2O-HCL THERMAL SILICON-OXIDES USING SIMS MEASUREMENTS [J].

DEAL, BE ;

HURRLE, A ;

SCHULZ, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) :2024-2027

[3] EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES [J].

DECLERCK, GJ ;

HATTORI, T ;

MAY, GA ;

BEAUDOUIN, J ;

MEINDL, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :436-439

[4] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J].

DIMARIA, DJ ;

WEINBERG, ZA ;

AITKEN, JM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :898-906

[5]

FREZEL H, 1979, THIN SOLID FILMS, V58, P301

[6] USE OF 111-TRICHLOROETHANE AS AN OPTIMIZED ADDITIVE TO IMPROVE SILICON THERMAL-OXIDATION TECHNOLOGY [J].

JANSSENS, EJ ;

DECLERCK, GJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1696-1703

[7]

KRIEGLER RJ, 1974, 11TH P IEEE REL PHYS, P153

[8]

KRIEGLER RJ, 1974, J JPN SOC APPL PHYS, V43, P341

[9]

MONKOWSKI J, 1979, SOLID STATE TECHNOL, V22, P58

[10]

MONKOWSKI J, 1978, THESIS PENNSYLVANIA

← 1 2 →