DECAY OF EXCESS CARRIERS IN THERMALLY TREATED OXYGEN-DOPED SILICON

被引：5

作者：

GLINCHUK, KD

LITOVCHENKO, NM

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 02期

关键词：

D O I：

10.1002/pssa.2210580228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：549 / 555

页数：7

共 19 条

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[2]

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[3]

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[5] STUDY OF NONLINEAR EXTRINSIC LUMINESCENCE IN GAAS [J].

GLINCHUK, KD ;

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[6] EFFECT OF QUENCHING RATE AND ANNEALING ON CONCENTRATION OF QUENCHED-IN RECOMBINATION CENTERS IN HEAT-TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (02) :K157-K160

[7] SOLUBILITY AND ORIGIN OF THERMALLY INDUCED RECOMBINATION CENTERS IN N-TYPE AND P-TYPE SILICON [J].

GLINCHUK, KD ;

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MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02) :K109-K113

[8] ROLE OF IMPURITIES IN FORMATION OF QUENCHED-IN RECOMBINATION CENTERS IN THERMALLY TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02) :K87-K90

[9] DECAY OF EXCESS CARRIER CONCENTRATION IN THERMALLY TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHE.NM ;

LINNIK, LF ;

MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02) :749-&

[10]

GLINCHUK KD, 1977, POLUPROVODN TEKH MIK, V25, P17

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