ANDERSON LOCALIZATION OF HOLES IN A SI INVERSION LAYER

被引：42

作者：

PEPPER, M ^{[1
]}

POLLITT, S ^{[1
]}

ADKINS, CJ ^{[1
]}

机构：

[1] CAVENDISH LAB,CAMBRIDGE,ENGLAND

来源：

PHYSICS LETTERS A | 1974年 / A 48卷 / 02期

关键词：

D O I：

10.1016/0375-9601(74)90424-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：113 / 114

页数：2

共 10 条

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[4] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES [J].

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PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1043-&

[5]

LICCIAORDELLO DC, TO BE PUBLISHED

[6]

MOTT N, 1973, ELECTRON POWER, V19, P321, DOI 10.1049/ep.1973.0382

[7] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .9. MINIMUM METALLIC CONDUCTIVITY [J].

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PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1015-&

[8] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J].

PEPPER, M ;

POLLITT, S ;

ADKINS, CJ ;

OAKLEY, RE .

PHYSICS LETTERS A, 1974, A 47 (01) :71-72

[9]

STERN F, TO BE PUBLISHED

[10]

TSUI DC, TO BE PUBLISHED

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