ELECTROLUMINESCENCE FROM N(+)-TYPE POROUS SILICON CONTACTED WITH LAYER-BY-LAYER DEPOSITED POLYANILINE

被引：61

作者：

BSIESY, A

NICOLAU, YF

ERMOLIEFF, A

MULLER, F

GASPARD, F

机构：

[1] CEN GRENOBLE,CEA,PMS,SESAM,DEPT RECH FONDAMENTALE MAT CONDENSEE,F-38054 GRENOBLE,FRANCE

[2] UNIV GRENOBLE 1,CNRS,URA 08,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

[3] CEN GRENOBLE,CEA TECHNOL AVANCEES,DOPT,LETI,F-38054 GRENOBLE,FRANCE

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

LUMINESCENCE; POLYMERS; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1016/0040-6090(95)91136-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A light-emitting diode is made by closely contacting an n(+)-type porous Si him with chemically polymerized polyaniline inside the pores of Si. The tight filling of the Si pores by polyaniline was testified by XPS depth profiling analysis. The diode shows a rectifying I-V characteristic, has a series resistance of 2 Omega and passes out high current densities under a forward bias of only a few volts. The diode efficiently emits red light under a forward bias voltage exceeding 3 V.

引用

收藏

页码：43 / 48

页数：6

相关论文

共 54 条

[1] SCANNING-TUNNELING-MICROSCOPY OF POROUS SILICON SURFACES [J].

AMISOLA, GB ;

BEHRENSMEIER, R ;

GALLIGAN, JM ;

OTTER, FA ;

NAMAVAR, F ;

KALKORAN, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (05) :1788-1792

[2] INVESTIGATIONS OF THE ELECTRICAL-PROPERTIES OF POROUS SILICON [J].

ANDERSON, RC ;

MULLER, RS ;

TOBIAS, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) :3406-3411

[3]

BASSOUS E, 1992, LIGHT EMISSION SILIC, V256, P23

[4] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].

BEALE, MIJ ;

BENJAMIN, JD ;

UREN, MJ ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636

[5] A MICROSTRUCTURAL STUDY OF POROUS SILICON [J].

BERBEZIER, I ;

HALIMAOUI, A .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5421-5425

[6] VISIBLE-LIGHT EMISSION FROM A POROUS SILICON SOLUTION DIODE [J].

BRESSERS, PMMC ;

KNAPEN, JWJ ;

MEULENKAMP, EA ;

KELLY, JJ .

APPLIED PHYSICS LETTERS, 1992, 61 (01) :108-110

[7] VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE [J].

BSIESY, A ;

MULLER, F ;

LIGEON, M ;

GASPARD, F ;

HERINO, R ;

ROMESTAIN, R ;

VIAL, JC .

PHYSICAL REVIEW LETTERS, 1993, 71 (04) :637-640

[8] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[9] EFFICIENT VISIBLE ELECTROLUMINESCENCE FROM HIGHLY POROUS SILICON UNDER CATHODIC BIAS [J].

CANHAM, LT ;

LEONG, WY ;

BEALE, MIJ ;

COX, TI ;

TAYLOR, L .

APPLIED PHYSICS LETTERS, 1992, 61 (21) :2563-2565

[10]

CANHAM LT, 1993, 21ST INT C PHYS SEM, V2, P1423

← 1 2 3 4 5 6 →