THE RELATION BETWEEN 1/F NOISE AND NUMBER OF ELECTRONS

被引：45

作者：

HOOGE, FN

机构：

[1] Department of Electrical Engineering, Eindhoven University of Technology, Eindhoven

来源：

PHYSICA B | 1990年 / 162卷 / 03期

关键词：

D O I：

10.1016/0921-4526(90)90030-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The validity of the empirical relation for 1/f{hook} noise, SR/R2 = α/Nf{hook}, is studied. An alternative version with a factor 1/A instead of the factor 1/N is considered. N is the number of electrons and A the number of atoms. Experimental and theoretical arguments for the relation in its original form are put forward. © 1990.

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页码：344 / 352

页数：9

相关论文

共 23 条

[1] VOLUME AND TEMPERATURE-DEPENDENCE OF THE 1/F NOISE PARAMETER-ALPHA IN SI [J].

CLEVERS, RHM .

PHYSICA B, 1989, 154 (02) :214-224

[2] NOISE AND LIFETIME MEASUREMENTS IN SI P+-I-N POWER DIODES [J].

FANG, P ;

VANRHEENEN, AD ;

VANDERZIEL, A ;

PENG, Q .

SOLID-STATE ELECTRONICS, 1989, 32 (05) :345-348

[3]

Giordano N., 1989, Reviews of Solid State Science, V3, P27

[4] THE VALIDITY OF HOOGE LAW FOR 1/F NOISE [J].

HOFMAN, F ;

ZIJLSTRA, RJJ .

SOLID STATE COMMUNICATIONS, 1989, 72 (12) :1163-1166

[5] ON EXPRESSIONS FOR 1/F NOISE IN MOBILITY [J].

HOOGE, FN .

PHYSICA B & C, 1982, 114 (03) :391-392

[6] EXPERIMENTAL STUDIES ON 1-F NOISE [J].

HOOGE, FN ;

KLEINPENNING, TGM ;

VANDAMME, LKJ .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532

[7] 1/F NOISE IS NO SURFACE EFFECT [J].

HOOGE, FN .

PHYSICS LETTERS A, 1969, A 29 (03) :139-&

[8]

HOOGE FN, 1990, 10TH INT C NOIS PHYS

[9] INTERPRETATION OF HOOGE 1/F NOISE FORMULA [J].

KISS, LB ;

KLEINPENNING, TGM .

PHYSICA B & C, 1987, 145 (02) :185-189

[10] ON THE 1/F NOISE PARAMETER-ALPHA IN DEGENERATE SEMICONDUCTORS AND METALS [J].

KLEINPENNING, TGM ;

BISSCHOP, J .

PHYSICA B & C, 1985, 128 (01) :84-87