EXCITE-PROBE DETERMINATION OF THE INTERSUBBAND LIFETIME IN WIDE GAAS/ALGAAS QUANTUM-WELLS USING A FAR-INFRARED FREE-ELECTRON LASER

被引：43

作者：

MURDIN, BN

KNIPPELS, GMH

VANDERMEER, AFG

PIDGEON, CR

LANGERAK, CJGM

HELM, M

HEISS, W

UNTERRAINER, K

GORNIK, E

GEERINCK, KK

HOVENIER, NJ

WENCKEBACH, WT

机构：

[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND

[2] UNIV LINZ,INST HALBLEITERPHYS,A-4040 LINZ,AUSTRIA

[3] TECH UNIV DELFT,FAC TECH NAT,2600 GA DELFT,NETHERLANDS

[4] VIENNA TECH UNIV,INST FESTKORPERELEKTRON,A-1040 VIENNA,AUSTRIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 08期

关键词：

D O I：

10.1088/0268-1242/9/8/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made for the first time in the far infrared. We have used an RF-linac-pumped free-electron laser to determine the relaxation rate associated with intersubband absorption in GaAs/AlGaAs quantum wells having a subband separation smaller than the optical phonon energy. The measurement yields a relaxation lifetime of 40 +/- 5 ps. This is compared with a variety of other results obtained with less direct techniques.

引用

页码：1554 / 1557

页数：4

共 23 条

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