3-DIMENSIONAL SIMULATION OF VLSI MOSFETS - THE 3-DIMENSIONAL SIMULATION PROGRAM WATMOS

被引：14

作者：

HUSAIN, A

CHAMBERLAIN, SG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：631 / 638

页数：8

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