CHEMISORPTION OF MN ON A GAAS(110) SURFACE

被引：21

作者：

FU, HX ^{[1
]}

YE, L ^{[1
]}

ZHANG, KM ^{[1
]}

XIDE, X ^{[1
]}

机构：

[1] CCAST, WORLD LAB, BEIJING 100080, PEOPLES R CHINA

来源：

SURFACE SCIENCE | 1995年 / 341卷 / 03期

关键词：

CHEMISORPTION; GALLIUM ARSENIDE; MANGANESE; SEMIEMPIRICAL MODELS AND MODEL CALCULATIONS;

D O I：

10.1016/0039-6028(95)00735-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemisorption of Mn on a GaAs(110) surface is studied theoretically by using a cluster model. The site preference for a Mn adatom is determined, and the electronic structure of the adsorbate system is calculated. It is shown that, instead of being adsorbed above the surface, the deposited Mn atom prefers to substitute a surface Ga atom. It is also found that the surface As atoms which are bonded to the Mn atom have only a weak interaction with the Ga atom which is being replaced. With increasing Mn coverage, these displaced Ga atoms may become randomly distributed over the surface. Our theoretical results are consistent with the experimental measurements. The reason for the occurrence of atom substitution is analyzed in detail.

引用

页码：273 / 281

页数：9

共 31 条

[1] ADSORPTION OF POTASSIUM ON THE IDEAL SI(111) SURFACE [J].