ULTRAFINE ALUMINUM-OXIDE POWDER PREPARED BY CHEMICAL VAPOR-DEPOSITION OF TRIMETHYLALUMINUM

被引：9

作者：

KIM, KH

HO, CH

SUH, TG

PRAKASH, S

BUNSHAH, RF

机构：

[1] Department of Materials Science and Engineering, University of California, Los Angeles, 90024, CA

来源：

JOURNAL OF MATERIALS ENGINEERING | 1991年 / 13卷 / 03期

关键词：

D O I：

10.1007/BF02834178

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultrafine aluminum oxide powder in the size range 5-150 nm has been successfully synthesized by metal-organic chemical vapor deposition (CVD) using the reaction between trimethyl aluminum (TMAl) and oxygen. With increase in growth temperature, the rate of particle formation increased and particle size decreased. As-synthesized powders were amorphous with hydrocarbon impurity from partially reacted TMAl. Some gamma-phase was also present in as-synthesized powder grown at higher temperatures. On annealing, the amorphous phase transformed to gamma-phase above 1000-degrees-C and then to alpha-phase via the theta-phase above 1200-degrees-C. The alpha-phase was associated with particle coalescence and was sized at 50-200 nm.

引用

页码：199 / 205

页数：7

共 14 条

[1]

Formenti M., Juillet F., Meriaudeau P., Teichner S.J., Vergnon P., Preparation in a Hydrogen-Oxygen Flame of Ultrafine Metal Oxide Particles, J. Colloid and Interface Science, 39, 1, pp. 79-89, (1972)

[2]

Kato M., Preparation of Ultrafine Particles of Refractory Oxides by Gas-Evaporation Method, Japanese Journal of Applied Physics, 15, 5, pp. 757-760, (1976)

[3]

Ayral A., Phalippou J., Submicrometer Alumina Powders, Adv. Ceram. Mater., 3, 6, pp. 575-579, (1988)

[4]

Ayral A., Droguet J.C., Alumina Powders via a Controlled Precipitation of Alumina Acetate, J. Mater. Res., 4, 4, pp. 967-971, (1989)

[5]

Ho C.H., “Preparation and Properties of Aluminum Nitride Films by Plasma-Enhanced Metal-Organic Chemical Vapor Deposition, M.S. Thesis, (1990)

[6]

Ehle R.S., Baliga B.J., Katz W., Low Temperature Aluminum Oxide Deposition, J. Electronic Materials, 12, 3, pp. 587-601, (1983)

[7]

Hua T.H., Armgarth M., A1<sub>2</sub>O<sub>3</sub> Deposited by the Oxidation of Trimethylaluminum as Gate Insulators in Hydrogen Sensors, J. Electronic Materials, 16, 1, pp. 27-31, (1987)

[8]

Gustin K.M., Gordon R.G., A Study of Aluminum Oxide Thin Films Prepared by Atmospheric-Pressure Chemical Vapor Deposition from Trimethylaluminum + Oxygen and/or Nitrous Oxide, J. Electronic Materials, 17, 6, pp. 509-517, (1988)

[9]

Dynys F.W., Holloran J.W., Alpha Alumina Formation in Alum-Derived Gamma Alumina, Journal of the American Ceramic Society, 65, 9, pp. 442-448, (1982)

[10]

Stine K.E., Bechman Infrared Laboratory Manual, (1975)

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