INFRARED IMPURITY ABSORPTION IN N-TYPE SILICON CARBIDE

被引:15
作者
DUBROVSKII, GB
RADOVANOVA, EI
机构
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1971年 / 48卷 / 02期
关键词
D O I
10.1002/pssb.2220480247
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:875 / +
页数:1
相关论文
共 8 条
[1]  
BORUKHOV.AS, 1969, FIZ TVERD TELA+, V11, P681
[2]   EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J].
CHOYKE, WJ ;
PATRICK, L .
PHYSICAL REVIEW, 1962, 127 (06) :1868-&
[3]   CONDUCTION BANDS IN 6H AND 15R SILICON CARBIDE .2. ABSORPTION MEASUREMENTS [J].
ELLIS, B ;
MOSS, TS .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 299 (1458) :393-&
[4]   ABSORPTION FREIER LADUNGSTRAGER IN ALPHA-SIC-KRISTALLEN [J].
GROTH, R ;
KAUER, E .
PHYSICA STATUS SOLIDI, 1961, 1 (05) :445-450
[5]  
IMAI A, 1966, J PHYS SOC JPN, V21, P3612
[6]  
Kholuyanov G. F., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P39
[7]  
Lomakina G. A., 1970, Fizika Tverdogo Tela, V12, P2918
[8]  
Purtseladze I. M., 1970, Fizika Tverdogo Tela, V12, P1283