HOLE CONFINEMENT IN MOS-GATED GEXSI1-X/SI HETEROSTRUCTURES

被引：64

作者：

GARONE, PM

VENKATARAMAN, V

STURM, JC

机构：

[1] Department of Electrical Engineering, Princeton University, Princeton

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 05期

关键词：

D O I：

10.1109/55.79566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the confinement of carriers in a MOS-gated Ge(x)Si1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/Ge(x)Si1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

引用

页码：230 / 232

页数：3

共 5 条

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