A NEW PROBE FOR MEASURING ELECTROLYTIC CONDUCTANCE

被引:17
作者
OLTHUIS, W
VOLANSCHI, A
BOMER, JG
BERGVELD, P
机构
[1] MESA Research Institute, University of Twente, 7500 AE Enschede
关键词
D O I
10.1016/0925-4005(93)85368-K
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A conductance cell of which the electrodes are provided with a 110 nm thick Ta2O5 insulating film is proposed and realized. The stable and very low impedance of the total oxide/solution interface largely reduces interference from redox processes. Measurement results, given as an output voltage between 10 and 600 mV as a function of the specific resistance between 0.1 and 8 kOMEGA, are shown to be in agreement with theoretically calculated results, both at the constant current and constant voltage mode of operation.
引用
收藏
页码:230 / 233
页数:4
相关论文
共 6 条
[1]   ON THE IMPEDANCE OF THE SILICON DIOXIDE ELECTROLYTE INTERFACE [J].
BOUSSE, L ;
BERGVELD, P .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 152 (1-2) :25-39
[2]   ELECTROLYTIC CONDUCTANCE MEASUREMENTS AND CAPACITIVE BALANCE [J].
BRAUNSTEIN, J ;
ROBBINS, GD .
JOURNAL OF CHEMICAL EDUCATION, 1971, 48 (01) :52-+
[3]  
DEBOER RW, 1978, MED BIOL ENG COMPUT, V16, P1, DOI 10.1007/BF02442925
[4]  
HARNED HS, 1958, PHYSICAL CHEM ELECTR
[5]  
JACOBS P, 1990, P IEEE EMBS 90 PHILA, P1484
[6]  
Rieger P. H., 1987, ELECTROCHEMISTRY