PHOTOINDUCED ABSORPTION CHANGE IN SOME SE-BASED GLASS ALLOY SYSTEMS

被引：55

作者：

NANG, TT

OKUDA, M

MATSUSHITA, T

机构：

[1] Department of Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu, Sakai, Osaka

[2] Dept. of Traffic Machinery, College of Engineering, Osaka Industrial University, Nakagaito, Daito, Osaka

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.19.947

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The random-network model for amorphous alloys proposed by White has been developed for some Se-based amorphous semiconductors (Ge-Se, As-Se, and Se-As-Ge) annealed or irradiated with light. The model suggests that the photobleaching and the photodarkening in these systems may be due to change in the number of bonds. Also, the photobleaching region and the photodarkening region are theoretically predicted for the Se-As-Ge glass-forming ternary system. © 1979 The American Physical Society.

引用

页码：947 / 955

页数：9

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