CHEMICAL AND ELECTRICAL-PROPERTIES OF INTERFACES BETWEEN DEPOSITED INSULATORS AND LA2CUO4

被引：2

作者：

LEVY, A ^{[1
]}

LERCEL, MJ ^{[1
]}

FALCK, JP ^{[1
]}

KASTNER, MA ^{[1
]}

BRIGHT, AA ^{[1
]}

KLEINSASSER, AW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.351211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-insulator-semiconductor capacitors have been fabricated using plasma enhanced chemical vapor deposition of Si3N4 and SiO2 insulators on La2CuO4 semiconducting single crystals. Auger electron spectroscopy was used to characterize the insulator-semiconductor interface after annealing at several temperatures. Copper segregation and oxygen out-diffusion were observed and the Si3N4-semiconductor interface was found to be more stable than the SiO2-semiconductor one.

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页码：1764 / 1767

页数：4

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