DIAGRAMMATIC APPROACH TO ANDERSON LOCALIZATION IN THE QUANTUM KICKED ROTATOR

被引：25

作者：

ALTLAND, A ^{[1
]}

机构：

[1] WEIZMANN INST SCI,DEPT NUCL PHYS,IL-76100 REHOVOT,ISRAEL

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.71.69

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The phenomenon of Anderson localization in the quantum kicked rotator is analyzed by means of concepts which were originally introduced in condensed matter physics. A diagrammatic language similar to the impurity diagram technique employed in the theory of disordered conductors is developed. The method is applied to a calculation of the quantum return probability and leads to results which coincide (apart from numerical factors) with recent numerical findings.

引用

页码：69 / 72

页数：4

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