THERMISTOR BASED ON DOPED POLYCRYSTALLINE DIAMOND THIN-FILMS

被引：16

作者：

WERNER, M ^{[1
]}

SCHLICHTING, V ^{[1
]}

OBERMEIER, E ^{[1
]}

机构：

[1] TECH UNIV BERLIN, W-1000 BERLIN 65, GERMANY

来源：

关键词：

D O I：

10.1016/0925-9635(92)90187-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline diamond double layers consisting of a heavily boron-doped and an underlying undoped diamond film were taken as starting material for the manufacture of thermistors. Thermistors with an active area of less than 4 × 10-3 cm2 were manufactured with the aid of conventional photolithography and reactive ion etching. The mean temperature coefficient of resistance of the thermistors is -1.48 × 10-3/K. Higher TCRs can be achieved by lower doping of the resistance layer. © 1992.

引用

页码：669 / 672

页数：4

共 6 条

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