ELECTRONIC STATES FOR THREEFOLD-COORDINATED AND FIVEFOLD-COORDINATED SI ATOMS IN AMORPHOUS SI

被引：6

作者：

ISHII, N ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV, FAC TECHNOL, DEPT ELECTR, KANAZAWA, ISHIKAWA 920, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.L1800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1800 / L1802

页数：3

共 10 条

[1] TRANSFERABLE NONORTHOGONAL TIGHT-BINDING PARAMETERS FOR SILICON [J].

ALLEN, PB ;

BROUGHTON, JQ ;

MCMAHAN, AK .

PHYSICAL REVIEW B, 1986, 34 (02) :859-862

[2] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J].

BIEGELSEN, DK ;

STUTZMANN, M .

PHYSICAL REVIEW B, 1986, 33 (05) :3006-3011

[3] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].

BROWER, KL .

APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113

[4] HYPERFINE INTERACTIONS OF THE PB CENTER AT THE SIO2 SI(111) INTERFACE [J].

COOK, M ;

WHITE, CT .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1741-1744

[5] DEFECT STATES AT FLOATING AND DANGLING BONDS IN AMORPHOUS SI [J].

FEDDERS, PA ;

CARLSSON, AE .

PHYSICAL REVIEW B, 1988, 37 (14) :8506-8508

[6]

HARRISON WA, 1980, ELECTRONIC STRUCTURE, P48

[7] DEFECT STATES IN AMORPHOUS-SILICON [J].

ISHII, N ;

KUMEDA, M ;

SHIMIZU, T .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 116 (01) :91-100

[8] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J].

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1986, 57 (23) :2979-2982

[9] QUANTITATIVE-ANALYSIS OF ELECTRON-PARAMAGNETIC-RES AND ELECTRON-NUCLEAR DOUBLE-RESONANCE SPECTRA OF D-CENTERS IN AMORPHOUS-SILICON - DANGLING VERSUS FLOATING BONDS [J].

STATHIS, JH ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1988, 37 (11) :6579-6582

[10] ELECTRON-NUCLEAR DOUBLE-RESONANCE OF DANGLING-BOND CENTERS IN A-SI-H [J].

YOKOMICHI, H ;

HIRABAYASHI, I ;

MORIGAKI, K .

SOLID STATE COMMUNICATIONS, 1987, 61 (11) :697-701

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