SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS

被引：789

作者：

COHEN, MH

FRITZSCHE, H

OVSHINSKY, SR

机构：

[1] James Franck Institute, Department of Physics, University of Chicago, Chicago

[2] Energy Conversion Devices, Inc., Troy

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.22.1065

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Because of the near perfect local satisfaction of the valence requirements of each atom, which is complemented by the positional and compositional disorder, covalently bonded amorphous alloys are intrinsic semiconductors. We describe a band model with some novel features, which successfully describes several important effects observed in these amorphous semiconducting alloys. © 1969 The American Physical Society.

引用

页码：1065 / +

页数：1

共 36 条

[1]

ANDRIESH AM, 1963, SOV PHYS-SOL STATE, V5, P1063

[2]

ANDRIESH AM, 1963, FIZ TVERD TELA, V5, P1461

[3] ELECTRONIC AND IONIC STRUCTURES OF METAL-AMMONIA SOLUTIONS [J].

COHEN, MH ;

THOMPSON, JC .

ADVANCES IN PHYSICS, 1968, 17 (70) :857-&

[4]

DEWALD JF, 1964, J ELECTROCHEM SOC, V111, P561

[5] ELECTRONIC CONDUCTION IN AS2SE3 AS2SE2TE AND SIMILAR MATERIALS [J].

EDMOND, JT .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (08) :979-&

[6]

FAGEN EA, 1969, B AM PHYS SOC, V14, P311

[7]

FAGEN EA, TO BE PUBLISHED

[8] NEW OPTICAL GLASSES WITH GOOD TRANSPARENCY IN THE INFRARED [J].

FRERICHS, R .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1953, 43 (12) :1153-1157

[9]

FRITZSCHE H, 1969, B AM PHYS SOC, V14, P311

[10]

FRITZSCHE H, TO BE PUBLISHED

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