BURSTEIN-MOSS EFFECT AND NEAR-BAND-EDGE LUMINESCENCE SPECTRUM OF HIGHLY DOPED INDIUM ARSENIDE

The shape of near‐band‐edge luminescence spectrum is studied and a quantitative analysis of the Burstein‐Moss shift in the three band approximation of Kane's theory is carried out. It is shown experimentally that with increasing electron concentration the spectrum maximum is shifted towards the high‐energy region up to 0.7 eV. At the high‐energy side of spectrum a kink is observed, and at the low‐energy side, an emission maximum at 0.39 to 0.40 eV. The calculations show that the spectrum shape may be described by indirect transitions: band–band and band–shallow acceptor. The narrowing of the optical band gap is accounted for a better agreement between the experimental and theoretical spectra. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA