THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES

被引：125

作者：

HUNG, CS

GLIESSMAN, JR

机构：

来源：

PHYSICAL REVIEW | 1950年 / 79卷 / 04期

关键词：

D O I：

10.1103/PhysRev.79.726

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：726 / 727

页数：2

共 7 条

[1] RESISTIVITY OF SEMICONDUCTORS CONTAINING BOTH ACCEPTORS AND DONORS
HUNG, CS
JOHNSON, VA
[J]. PHYSICAL REVIEW, 1950, 79 (03): : 535 - 536
[2] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES
HUNG, CS
[J]. PHYSICAL REVIEW, 1950, 79 (04): : 727 - 728
[3] CORRECTION
JOHNSON, V
[J]. PHYSICAL REVIEW, 1947, 71 (12): : 909 - 909
[4] TRANSITION FROM CLASSICAL TO QUANTUM STATISTICS IN GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURE
JOHNSON, VA
LARKHOROVITZ, K
[J]. PHYSICAL REVIEW, 1947, 71 (06): : 374 - 375
[5] THEORETICAL HALL COEFFICIENT EXPRESSIONS FOR IMPURITY SEMICONDUCTORS
JOHNSON, VA
LARKHOROVITZ, K
[J]. PHYSICAL REVIEW, 1950, 79 (01): : 176 - 177
[6] JOHNSON VA, 1947, PHYS REV, V72, P531
[7] LARKHOROVITZ K, 1945, NDRC14585 CONTR FIN, P33