LATTICE DEFORMATION AND MISORIENTATION OF INXGA1-X AS EPITAXIAL LAYERS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：29

作者：

KAWAMURA, Y

OKAMOTO, H

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Mushashino-shi

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.326441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice deformation and misorientation of InxGa1-xAs epitaxial layers grown on InP substrates by molecular-beam epitaxy is measured from rocking curves of an x-ray double-crystal monochrometer. It is concluded that the epitaxial layers are deformed from cubic to tetragonal and misoriented to the substrates except in lattice-matched epilayers. This result suggests that the substrate lattice has a large influence on the structure of the epitaxial layers.

引用

页码：4457 / 4458

页数：2

共 6 条

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