PLASMA-ETCHING OF SILYLATED PHOTORESIST - A STUDY OF MECHANISMS

被引：9

作者：

JOUBERT, O

PONS, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 01期

关键词：

D O I：

10.1116/1.586721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The parameters relevant to dry development of silylated polymers have been studied, in particular ion energy and atomic oxygen concentration. Critical dimension loss is demonstrated to depend upon silylation angle, sputtering rate of the silylated polymer, and development time. Anisotropic etch profiles are argued to be due to a compromise between critical dimension loss and isotropic etching of the unsilylated polymer.

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页码：26 / 31

页数：6

相关论文

共 28 条

[1] COMPARISON OF THE ELECTRON BEAM SENSITIVITIES AND RELATIVE OXYGEN PLASMA ETCH RATES OF VARIOUS ORGANOSILICON POLYMERS. [J].

Babich, E. ;

Paraszczak, J. ;

Hatzakis, M. ;

Shaw, J. ;

Grenon, B.J. .

Microelectronic Engineering, 1985, 3 (1-4) :279-291

[2] OXYGEN ATOM ACTINOMETRY REINVESTIGATED - COMPARISON WITH ABSOLUTE MEASUREMENTS BY RESONANCE-ABSORPTION AT 130 NM [J].

BOOTH, JP ;

JOUBERT, O ;

PELLETIER, J ;

SADEGHI, N .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :618-626

[3] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].

COBURN, JW ;

CHEN, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136

[4]

COOPMANS F, 1987, SOLID STATE TECHNOL, V30, P93

[5]

Coopmans F., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V631, P34, DOI 10.1117/12.963623

[6]

DIJKSTRA J, 1991, P SOC PHOTO-OPT INS, V1466, P592, DOI 10.1117/12.46407

[7]

GARZA CM, 1989, P SOC PHOTO-OPT INS, V1086, P229, DOI 10.1117/12.953034

[8]

GARZA CM, 1991, P SOC PHOTO-OPT INS, V1466, P616, DOI 10.1117/12.46409

[9] MICROSCOPIC UNIFORMITY IN PLASMA-ETCHING [J].

GOTTSCHO, RA ;

JURGENSEN, CW ;

VITKAVAGE, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05) :2133-2147

[10] OXYGEN PLASMA-ETCHING FOR RESIST STRIPPING AND MULTILAYER LITHOGRAPHY [J].

HARTNEY, MA ;

HESS, DW ;

SOANE, DS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (01) :1-13