GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS

被引：151

作者：

STERN, F ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1973年 / QE 9卷 / 02期

关键词：

D O I：

10.1109/JQE.1973.1077478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：290 / 294

页数：5

共 27 条

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