INTERACTION OF ALKALI-METALS WITH SEMICONDUCTORS

被引：33

作者：

BATRA, IP

机构：

[1] IBM, San Jose, CA, USA, IBM, San Jose, CA, USA

来源：

关键词：

DANGLING BOND EFFECTS - METALLIZATION OF OVERLAYER - STRONG IONIC BOND;

D O I：

10.1016/S0079-6816(87)80013-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：175 / 189

页数：15

共 60 条

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[9] IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER
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[10] THEORETICAL-STUDY OF THE ADSORPTION OF OXYGEN ON SI(100)
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