STIMULATED PLASMON EMISSION IN SEMICONDUCTORS

被引：7

作者：

ELCI, A

机构：

[1] Science Applications, Inc., San Diego, CA 92038

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.19.4181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reinvestigates the possibility of coherent plasma-wave oscillations in direct-gap semiconductors when the plasma frequency is near the band gap. A theory of plasma instability is developed, based on the collective-coordinate method. Threshold, the nonlinear region above threshold, and the electric field are investigated from the perspective of the collective-coordinate method, and the results are applied to specific narrow-gap semiconductors. When the plasma-wave emission is coherent, the cross section for light-plasmon scattering can be enhanced many orders of magnitude. Experiments are proposed. © 1979 The American Physical Society.

引用

页码：4181 / 4197

页数：17

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