CARRIER PROFILES AND COLLECTION EFFICIENCY IN GAUSSIAN P-N JUNCTIONS UNDER ELECTRON BEAM BOMBARDMENT

被引:14
作者
HOFF, P
EVERHART, TE
机构
关键词
D O I
10.1109/T-ED.1970.17009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:458 / &
相关论文
共 17 条
[1]  
Brauer F., 1967, ORDINARY DIFFERENTIA
[2]  
BROWN AV, 1963, IEEE T, VED10, P8
[3]  
DALE D, 1961, J APPL PHYS, V32, P1377
[4]  
DILL FH, PRIVATE COMMUNICATIO
[5]  
GARY PA, 1968, IEEE T ELECTRON DEV, VED15, P30
[6]  
GUMMEL HK, 1964, IEEE T, VED11, P455
[7]   EFFECT OF MOBILITY GRADIENT IN INHOMOGENEOUSLY DOPED SEMICONDUCTORS [J].
HO, BL ;
CHO, CC .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) :3333-&
[8]  
HOFF P, 1969, 10 P S EL ION LAS BE
[9]   EFFECTS OF DRIFT FIELDS AND FIELD GRADIENTS ON QUANTUM EFFICIENCY OF PHOTOCELLS [J].
JAIN, GC ;
ALRIFAI, RMS .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :768-&
[10]  
JORDAN AG, 1960, IRE T, VED 7, P242