AUTODOPING EFFECTS OF GE IN VAPOR-GROWN GAP LAYERS ON GE SUBSTRATES

[1] AOKI M, 1970, JAPAN J APPL PHYS S, V39, P234

[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[3] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &

[4] EPSTEIN AS, 1969, SOLID STATE ELECTRON, V12, P487

[5] PAIR SPECTRA INVOLVING DONOR AND/OR ACCEPTOR GERMANIUM IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 486 - +

[6] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &

[7] IMPROVEMENT OF QUANTUM EFFICIENCY IN GALLIUM ARSENIDE ELECTROLUMINESCENT DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 665 - &

[8] ZINC DIFFUSION INTO GALLIUM PHOSPHIDE UNDER HIGH AND LOW PHOSPHORUS OVERPRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 648 - &

[9] ELECTROLUMINESCENCE FROM GE-DOPED GAP P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1557 - &

[10] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[1] AOKI M, 1970, JAPAN J APPL PHYS S, V39, P234

[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[3] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &

[4] EPSTEIN AS, 1969, SOLID STATE ELECTRON, V12, P487

[5] PAIR SPECTRA INVOLVING DONOR AND/OR ACCEPTOR GERMANIUM IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 486 - +

[6] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &

[7] IMPROVEMENT OF QUANTUM EFFICIENCY IN GALLIUM ARSENIDE ELECTROLUMINESCENT DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 665 - &

[8] ZINC DIFFUSION INTO GALLIUM PHOSPHIDE UNDER HIGH AND LOW PHOSPHORUS OVERPRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 648 - &

[9] ELECTROLUMINESCENCE FROM GE-DOPED GAP P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1557 - &

[10] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &