MONTE-CARLO SIMULATION OF BACKSCATTERED ELECTRONS AND ENERGY FROM THICK TARGETS AND SURFACE-FILMS

被引:76
作者
DAPOR, M
机构
[1] Istituto per la Ricerca Scientifica e Tecnologica (I.R.S.T.), I-38050 Povo, Trento
关键词
D O I
10.1103/PhysRevB.46.618
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electron-matter interaction is described by a Monte Carlo procedure in which the mean free path is calculated by using a screened Rutherford formula, while energy loss is computed by using the Kanaya and Okayama semiempirical expression, Monte Carlo simulation results of the backscattering coefficient have been compared with the available experimental data. The examined energy range was 5-30 keV, the atomic number range was 4-92, and the tilt angle range was O-degrees-80-degrees. The agreement between simulated and experimental data is found to be excellent in the energy range 10-30 keV; also for 5 keV the agreement is very good when the atomic number is lower than 50. Then the mean backscattered energy was computed for bulk targets, unsupported thin films, and surface films.
引用
收藏
页码:618 / 625
页数:8
相关论文
共 68 条
[1]   BACK SCATTERING OF ELECTRONS [J].
ARCHARD, GD .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (08) :1505-&
[2]   APPLICATION OF MONTE-CARLO TECHNIQUE TO THE ELECTRON-PROBE MICROANALYSIS OF TERNARY SI-B-O FILMS ON SILICON [J].
ARMIGLIATO, A ;
DESALVO, A ;
RINALDI, R ;
ROSA, R .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (08) :1299-1308
[3]  
ARNAL F, 1969, CR ACAD SCI B PHYS, V268, P1526
[4]  
BERGER MJ, 1964, NATL ACAD SCI NATL R, V1133, P205
[5]  
Bethe H, 1928, ANN PHYS-BERLIN, V87, P55
[6]  
Bethe H, 1930, ANN PHYS-BERLIN, V5, P325
[7]  
BIRKHOFF RD, 1958, HDB PHYSIK, V34, P53
[8]   ELECTRON SCATTERING IN THICK TARGETS [J].
BISHOP, HE .
BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (06) :703-&
[9]   A MONTE CARLO CALCULATION ON SCATTERING OF ELECTRONS IN COPPER [J].
BISHOP, HE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (547P) :855-&
[10]  
BISHOP HE, 1967, 4 P C INT OPT RAY 10, P153