SURFACE BARRIERS ON LAYER SEMICONDUCTORS - GAS, GASE, GATE

被引：19

作者：

KURTIN, S

MEAD, CA

机构：

[1] California Institute of Technology, Pasadena

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1969年 / 30卷 / 08期

关键词：

D O I：

10.1016/0022-3697(69)90179-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Surface barriers formed on the gallium-chalcogenide layer semiconductors GaS, GaSe and GaTe are studied by the photoresponse technique. The observed behavior is qualitatively similar to that of non-layer compounds. © 1969.

引用

页码：2007 / &

共 6 条

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