LOCALIZED TEMPERATURE DYNAMICS OF GAALAS LASER FACETS INVESTIGATED BY RAMAN MICROPROBE MEASUREMENTS

被引:13
作者
KRANTZ, MC
ROSEN, HJ
LENTH, W
机构
[1] IBM Almaden Research Center, San Jose, Ca 95120
关键词
Measurements; Semiconductor lasers;
D O I
10.1049/el:19900643
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Raman micro-probe studies of diode laser facet temperatures in CW operation show a significant linear temperature rise below the laser threshold and a rapid nonlinear heating above the threshold. Dynamical measurements using current injection pulses show fast heating of the laser facet with a sub-microsecond risetime and much slower cooling within several micro-seconds. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:990 / 992
页数:3
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