THEORY OF ANISOTROPY OF 2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS

被引：90

作者：

HUTCHINGS, DC ^{[1
]}

WHERRETT, BS ^{[1
]}

机构：

[1] HERIOT WATT UNIV, DEPT PHYS, EDINBURGH EH14 4AS, SCOTLAND

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.49.2418

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the higher Gamma(15)(c) conduction-band set on the strength of the two-photon-absorption coefficient, the two-photon linear/circular dichroism, and the two-photon-absorption anisotropy is calculated across the spectral region below the fundamental absorption edge, for the cubic materials GaAs and InSb. The anisotropy is entirely due to the higher band and is predicted to produce up to a 70% variation in the two-photon-absorption coefficient of GaAs as the relative orientation of the optical polarization to the crystal axes is altered. This is in good agreement with recent experiments.

引用

页码：2418 / 2426

页数：9

共 23 条

[1] Arifzhanov S. B., 1975, Soviet Physics - Solid State, V17, P46
[2] ANISOTROPY OF 2-PHOTON ABSORPTION IN GAAS AND CDTE
BEPKO, SJ
[J]. PHYSICAL REVIEW B, 1975, 12 (02): : 669 - 672
[3] BUTCHER PN, 1990, CAMBRIDGE STUDIES MO, V9
[4] DVORAK MD, IN PRESS IEEE J QUAN
[5] ANISOTROPY OF 2-PHOTON ABSORPTION IN CUBIC DIRECT-BAND-GAP SEMICONDUCTORS
DYKMAN, MI
RUBO, YG
[J]. PHYSICAL REVIEW B, 1992, 45 (11): : 5926 - 5932
[6] THIRD-ORDER OPTICAL SUSCEPTIBILITIES IN 4-4 AND 3-5 SEMICONDUCTORS
FLYTZANIS, C
[J]. PHYSICS LETTERS A, 1970, A 31 (05) : 273 - +
[7] NONDEGENERATE 2-PHOTON ABSORPTION IN ZINC BLENDE SEMICONDUCTORS
HUTCHINGS, DC
VANSTRYLAND, EW
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1992, 9 (11) : 2065 - 2074
[8] KRAMERS-KRONIG RELATIONS IN NONLINEAR OPTICS
HUTCHINGS, DC
SHEIKBAHAE, M
HAGAN, DJ
VANSTRYLAND, EW
[J]. OPTICAL AND QUANTUM ELECTRONICS, 1992, 24 (01) : 1 - 30
[9] HUTCHINGS DC, IN PRESS OPT MATER
[10] BAND STRUCTURE OF INDIUM ANTIMONIDE
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

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