RAMAN-STUDY OF PHOSPHORUS-IMPLANTED AND PULSED LASER-ANNEALED GAAS

被引：29

作者：

ASHOKAN, R ^{[1
]}

JAIN, KP ^{[1
]}

MAVI, HS ^{[1
]}

BALKANSKI, M ^{[1
]}

机构：

[1] UNIV PARIS 06,PHYS SOLIDES LAB,F-75230 PARIS 05,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.337200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1985 / 1993

页数：9

共 28 条

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[10] RAMAN-SCATTERING FROM ION-IMPLANTED SILICON [J].

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