ELECTRON-TUNNELING STUDY OF SUPERCONDUCTING PROXIMITY EFFECT IN SILICON BACKED WITH PB ALLOY

被引:6
作者
NISHINO, T [1 ]
HATANO, M [1 ]
KAWABE, U [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷
关键词
D O I
10.7567/JJAPS.26S3.1543
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1543 / 1544
页数:2
相关论文
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