LIMITS TO QUALITY AND SIZE OF DIAMOND AND CUBIC BORON-NITRIDE SYNTHESIZED UNDER HIGH-PRESSURE, HIGH-TEMPERATURE CONDITIONS

被引：31

作者：

CAVENEY, RJ

机构：

[1] De Beers Diamond Research Laboratory, Johannesburg, 2000

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(92)90213-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The synthesis, under high pressure and high temperature conditions, of diamond and cubic boron nitride is discussed. The limitations of size, structure and perfection are given for crystals grown from graphite and hexagonal boron nitride respectively, and also using the temperature gradient method from a diamond or cubic boron nitride source.

引用

页码：197 / 205

页数：9

共 12 条

[1]

BERMAN R, 1955, Z ELEKTROCHEM, V59, P333

[2]

BURNS RC, 1990, J CRYST GROWTH, V104, P258

[3] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].