IS SOS READY FOR VLSI

[1] BURNS JR, 1964, RCA REV, V25, P627

[2] HEIMAN FP, 1969 C PROPR UT STRU

[3] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 980 - 986

[4] NISHI Y, 1976 I P ESSCIRC C T

[5] 2-MUM SILICON-GATE C-MOS-SOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 996 - 1004

[6] TRILHE J, 1977, JES, V124, P1209

[7] VONDERSCHMITT BV, 1978, RCA ENG, V24, P4

[1] BURNS JR, 1964, RCA REV, V25, P627

[2] HEIMAN FP, 1969 C PROPR UT STRU

[3] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 980 - 986

[4] NISHI Y, 1976 I P ESSCIRC C T

[5] 2-MUM SILICON-GATE C-MOS-SOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 996 - 1004

[6] TRILHE J, 1977, JES, V124, P1209

[7] VONDERSCHMITT BV, 1978, RCA ENG, V24, P4