SOME DESIGNS AND A CHARACTERIZATION METHOD FOR GAAS OPERATIONAL-AMPLIFIERS FOR SWITCHED-CAPACITOR APPLICATIONS

被引：6

作者：

TOUMAZOU, C ^{[1
]}

HAIGH, DG ^{[1
]}

机构：

[1] UNIV LONDON UNIV COLL,DEPT ELECTR & ELECT ENGN,LONDON WC1E 7JE,ENGLAND

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 18期

关键词：

ELECTRIC NETWORKS; SWITCHING - SEMICONDUCTING GALLIUM ARSENIDE - TRANSISTORS; FIELD EFFECT;

D O I：

10.1049/el:19880795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A differential to single-ended convertor stage suitable for N-channel depletion-mode GaAs MESFET implementation is modified to allow increased gain. This enhanced input stage is combined with two different high-gain stages to yield two operational amplifier designs suitable for switched capacitor applications. A new procedure for characterizing amplifiers in terms of settling time is presented and applied to the above designs. It reveals the ultimate speed limitations for a given amplifier design and allows the MESFET gate widths to be scaled to obtain optimum settling behavior for any given capacitative load.

引用

页码：1170 / 1172

页数：3

共 7 条

[1]

HAIGH DG, 1988, 1988 IEE C SAR C EL

[2]

LARSON EL, 1987, IEEE J SOLID STATE C, V22, P971

[3]

SPENCE R, 1986, SILICON DESIGN MAR, P6

[4] DESIGN OF A HIGH-GAIN, SINGLE-STAGE OPERATIONAL-AMPLIFIER FOR GAAS SWITCHED-CAPACITOR FILTERS [J].

TOUMAZOU, C ;

HAIGH, DG .

ELECTRONICS LETTERS, 1987, 23 (14) :752-754

[5] LEVEL-SHIFTING DIFFERENTIAL TO SINGLE-ENDED CONVERTER CIRCUITS FOR GAAS-MESFET IMPLEMENTATION [J].

TOUMAZOU, C ;

HAIGH, DG .

ELECTRONICS LETTERS, 1987, 23 (20) :1053-1055

[6]

TOUMAZOU C, 1987, 1987 IEE C AN IC DES

[7]

YANG HC, 1988, 30TH P MIDW S CIRC S, P952

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