Etching Studies of Beryllium Oxide Crystals

被引:7
作者
Austerman, S. B. [1 ]
Newkirk, J. B. [2 ]
Smith, D. K. [3 ]
Newkirk, H. W. [3 ]
机构
[1] Atom Int, Canoga Pk, CA USA
[2] Univ Denver, Denver, CO USA
[3] Lawrence Radiat Lab, Livermore, CA USA
关键词
D O I
10.1007/BF00572423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemical etching behaviour of BeO crystals was investigated for selected etchants ranging from basic to acidic in nature. Surface-emergent defects (dislocations, enclosed platinum crystals, point-defect concentrations, surface mechanical damage, twin boundaries) give rise to recognisable etch figures that are characteristic of etchant, defect type, and orientation of emergence face. Gross etching rates (in the absence of surface-emergent defects) are strongly anisotropic for both basic and acidic etchants, reflecting the crystallographic polarity of the BeO crystal structure; intermediate etchants give nearly isotropic etching. The details of gross and figure etching are described.
引用
收藏
页码:378 / 387
页数:10
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