LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND, V10, P8

[2] BAERI P, 1978, NUCL INSTR METH

[3] BRICE DK, 1975, ION IMPLANTATION RAN

[4] DVURECHENSKII AV, 1977, 1ST USSR USA SEM ION

[5] FOTI G, UNPUBLISHED

[6] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89

[7] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8] KHAIBULLIN IB, 1977, 1ST USSR USA SEM ION

[9] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 429 - 432

[10] SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND, V10, P8

[2] BAERI P, 1978, NUCL INSTR METH

[3] BRICE DK, 1975, ION IMPLANTATION RAN

[4] DVURECHENSKII AV, 1977, 1ST USSR USA SEM ION

[5] FOTI G, UNPUBLISHED

[6] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89

[7] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8] KHAIBULLIN IB, 1977, 1ST USSR USA SEM ION

[9] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 429 - 432

[10] SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309