ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN LITHIUM-CONTAINING SILICON

被引:2
作者
BRUCKER, GJ
机构
关键词
D O I
10.1109/TNS.1970.4325781
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:144 / +
页数:1
相关论文
共 9 条
[1]   ELECTRICAL STUDIES OF ELECTRON-IRRADIATED LITHIUM-CONTAINING N-TYPE SILICON [J].
BRUCKER, GJ .
PHYSICAL REVIEW, 1969, 183 (03) :712-+
[2]  
BRUCKER GJ, 1968, JPL952555 CONTR
[3]  
BRUCKER GJ, 1969, JPL952249 CONTR
[4]  
BRUCKER GJ, 1968, NAS510239 NASA CONTR
[5]   DIFFUSION RATE OF LI IN SI AT LOW TEMPERATURES [J].
PELL, EM .
PHYSICAL REVIEW, 1960, 119 (04) :1222-1225
[6]  
PELL EM, 1961, J APPL PHYS, V32, P6
[7]   THEORETICAL TREATMENT OF THE KINETICS OF DIFFUSION-LIMITED REACTIONS [J].
WAITE, TR .
PHYSICAL REVIEW, 1957, 107 (02) :463-470
[8]  
WATKINS GD, 1967, TOULOUSE C RADIATION, P1
[9]   LITHIUM-DOPED RADIATION-RESISTANT SILICON SOLAR CELLS [J].
WYSOCKI, JJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :168-+