JOSEPHSON JUNCTION WITH LATERAL INJECTION AS A VORTEX TRANSISTOR

被引:49
作者
LIKHAREV, KK
SEMENOV, VK
SNIGIREV, OV
TODOROV, BN
机构
[1] Department of Physics, Moscow State University, Moscow 117234, U.S.S.R.
关键词
D O I
10.1109/TMAG.1979.1060084
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Long narrow Josephson junctions with current injection to their long (lateral) sides are examined theoretically. injection into a finite number of points as well as distributed injection are considered. The external magnetic field effect on the critical current and on the I-V curves is calculated. It is shown that the junction with current injection into many points in parallel is an almost complete analog of a conventional semiconductor transistor, the role of electric charge carriers being played by Josephson vortices carrying a single flux quanta. The use of a vortex transistor as a circuit element of both analog and digital devices is discussed. © 1979 IEEE
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页码:420 / 423
页数:4
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