DIFFUSION LIMITING MECHANISM IN SI-DELTA DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

KIM, Y ^{[1
]}

MIN, SK ^{[1
]}

KIM, TW ^{[1
]}

机构：

[1] KWANGWOON UNIV,DEPT PHYS,NOWON KU,SEOUL 139050,SOUTH KOREA

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 84卷 / 04期

关键词：

D O I：

10.1016/0038-1098(92)90495-U

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Capacitance-voltage measurements at room temperatures have been carried out to investigate the spatial localization of Si in delta-doped GaAs grown by atmospheric pressure metalorganic chemical vapor deposition at several doping densities and temperatures. Even though the growth temperature is as high as 750-degrees-C, the capacitance-voltage profiles show a full-width at half-maximum value of carrier profiles and a Si diffusion coefficient are 44 angstrom and 4 x 10(-17) cm2 s-1, respectively. The value of the diffusion coefficient is an order of magnitude lower than that for molecular beam epitaxy-grown samples at the same temperature. This result will be discussed by using a diffusion limiting mechanism.

引用

页码：453 / 456

页数：4

共 16 条

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