EPITAXIAL GRAIN-GROWTH IN THIN METAL-FILMS

被引：85

作者：

THOMPSON, CV ^{[1
]}

FLORO, J ^{[1
]}

SMITH, HI ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial alignment has been obtained by means of grain growth in polycrystalline films deposited on single-crystal substrates. A theory for epitaxial grain growth is outlined and results given for experiments on Au, Al, Cu, and Ag films on vacuum-cleaved NaCl, KBr, KCl, or mica. Epitaxial grain growth provides a fundamentally different alternative to conventional epitaxy, and can lead to very thin films with improved continuity and crystalline perfection, as well as non-lattice-matched orientations.

引用

页码：4099 / 4104

页数：6

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